VS-10MQ100HM3 www.vishay.com vishay semiconductors revision: 02-apr-15 1 document number: 94836 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 1 a features ? low forward voltage drop ? guard ring for enhanced ruggedness and long term reliability ? small footprint, surface mountable ? high frequency operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? meets jesd 201 class 2 whisker test ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description the VS-10MQ100HM3 surface mount schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on pc boards. typical applications are in disk drive s, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary package do-214ac (sma) i f(av) 1 a v r 100 v v f at i f 0.63 v i rm 1 ma at 125 c t j max. 150 c diode variation single die e as 1.0 mj cathode anode do-214ac ( s ma) major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 1 a v rrm 100 v i fsm t p = 5 s sine 120 a v f 1.5 a pk , t j = 125 c 0.68 v t j range -55 to +150 c voltage ratings parameter symbol VS-10MQ100HM3 units maximum dc reverse voltage v r 100 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current ? see fig. 4 i f(av) 50 % duty cycle at t l = 126 c, rectangular waveform ? on pc board 9 mm 2 island ? (0.013 mm thick copper pad area) 1.5 a 50 % duty cycle at t l = 135 c, rectangular waveform ? on pc board 9 mm 2 island ? (0.013 mm thick copper pad area) 1 maximum peak one cycle ? non-repetitive su rge current, t j = 25 c ? see fig. 6 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 120 10 ms sine or 6 ms rect. pulse 30 non-repetitive avalanche energy e as t j = 25 c, i as = 0.5 a, l = 8 mh 1.0 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 0.5 a
VS-10MQ100HM3 www.vishay.com vishay semiconductors revision: 02-apr-15 2 document number: 94836 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width = 300 s, duty cycle = 2 % note (1) thermal runaway condition fo r a diode on its own heatsink electrical specifications parameter symbol test conditions values units maximum forward voltage drop ? see fig. 1 v fm (1) 1 a t j = 25 c 0.78 v 1.5 a 0.85 1 a t j = 125 c 0.63 1.5 a 0.68 maximum reverse leakage current ? see fig. 2 i rm t j = 25 c v r = rated v r 0.1 ma t j = 125 c 1 threshold voltage v f(to) t j = t j maximum 0.52 v forward slope resistance r t 78.4 m ? typical junction capacitance c t v r = 10 v dc , t j = 25 c, test signal = 1 mhz 38 pf typical series inductance l s measured lead to lead 5 mm from package body 2.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg -55 to +150 c maximum thermal resistance, ? junction to ambient r thja dc operation 80 c/w approximate weight 0.07 g 0.002 oz. marking device case style sma (similar d-64) 1j dp tot dt j ------------- 1 r thja -------------- <
VS-10MQ100HM3 www.vishay.com vishay semiconductors revision: 02-apr-15 3 document number: 94836 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical peak reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum average forward current vs. allowable lead temperature fig. 5 - maximum average forward dissipation vs. average forward current fig. 6 - maximum peak surge forward current vs. pulse duration note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 10 1 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0.1 0.4 0.6 0.8 1.0 1.6 1.2 1.4 t j = 25 c t j = 150 c t j = 125 c 0.01 0.001 v r - reverse voltage (v) i r - reverse current (ma) 0 0.0001 100 0.1 20 40 60 1 80 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 0 100 v r - reverse voltage (v) c t - junction capacitance (pf) 0 10 100 40 80 20 60 t j = 25 c 1 i f(av) - average forward current (a) allowable case temperature (c) 110 150 0 0.4 0.8 1.2 2.4 90 100 120 130 1.6 2.0 140 dc see note (1) square wave (d = 0.50) 80 % rated v r applied d = 0.20 d = 0.33 d = 0.50 d = 0.75 d = 0.25 i f(av) - average forward current (a) average power loss (w) 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 2.0 2.4 1.6 1.6 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 1.4 1.2 1.0 t p - square wave pulse duration (s) 100 i fsm - non-repetitive surge current (a) 10 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge t j = 25 c
VS-10MQ100HM3 www.vishay.com vishay semiconductors revision: 02-apr-15 4 document number: 94836 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n preferred package code minimum order quantity packaging description VS-10MQ100HM3/5at 5at 7500 13" diam eter plastic tape and reel links to related documents dimensions www.vishay.com/doc?95400 part marking information www.vishay.com/doc?95403 packaging information www.vishay.com/doc?95404 2 - current rating 3 - m = sma 4 - q = schottky ?q? series 5 - voltage rating (100 = 100 v) 1 - vishay semiconductors product device code vs- 10 m q 100 6 - h = aec-q101 qualified 5 1 3 2 4 6 7 hm3 - environmental digit: m3 = halogen-free, rohs-compliant and terminations lead (pb)-free 7
document number: 95400 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 sma outline dimensions vishay semiconductors dimensions in inches (millimeters) do-214ac ( s ma) mounting pad layout 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) 0.030 (0.76) 0.060 (1.52) 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min.
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